 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| inchange semiconductor isc product specification isc silicon pnp darlington power transistor BDX88/a/b/c description high dc current gain- : h fe = 750(min)@ i c = -6a collector-emitter sustaining voltage- : v ceo(sus) = -45v(min)- BDX88; -60v(min)- BDX88a -80v(min)- BDX88b; -100v(min)- BDX88c complement to type bdx87/a/b/c applications designed for use in power linear and switching applications. absolute maximum ratings(t a =25 ) symbol parameter value unit BDX88 -45 BDX88a -60 BDX88b -80 v cbo collector-base voltage BDX88c -100 v BDX88 -45 BDX88a -60 BDX88b -80 v ceo collector-emitter voltage BDX88c -100 v v ebo emitter-base voltage -5 v i c collector current-continuous -12 a i cm collector current-peak -18 a i b b base current -200 ma p c collector power dissipation @ t c =25 120 w t j junction temperature 200 t stg storage temperature range -65~200 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.45 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp darlington power transistor BDX88/a/b/c electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit BDX88 -45 BDX88a -60 BDX88b -80 v ceo(sus) collector-emitter sustaining voltage BDX88c i c = -100ma; i b = 0 -100 v v ce( sat )-1 collector-emitter saturation voltage i c = -6a; i b = -24ma b -2.0 v v ce( sat )-2 collector-emitter saturation voltage i c = -12a; i b = -120ma -3.0 v v be( sat ) base-emitter saturation voltage i c = -12a; i b = -120ma -4.0 v v be( on ) base-emitter on voltage i c = -6a; v ce = -3v -2.8 v BDX88 v cb = -45v; i e = 0 v cb = -45v; i e = 0; t c = 150 -0.5 -5.0 BDX88a v cb = -60v; i e = 0 v cb = -60v; i e = 0; t c = 150 -0.5 -5.0 BDX88b v cb = -80v; i e = 0 v cb = -80v; i e = 0; t c = 150 -0.5 -5.0 i cbo collector cutoff current BDX88c v cb = -100v; i e = 0 v cb = -100v; i e = 0; t c = 150 -0.5 -5.0 ma BDX88 v ce = -22v; i b = 0 b BDX88a v ce = -30v; i b = 0 b BDX88b v ce = -40v; i b = 0 b i ceo collector cutoff current BDX88c v ce = -50v; i b = 0 b -1.0 ma i ebo emitter cutoff current v eb = -5v; i c = 0 -2.0 ma h fe-1 dc current gain i c = -5a; v ce = -3v 1000 h fe-2 dc current gain i c = -6a; v ce = -3v 750 18000 h fe-3 dc current gain i c = -12a; v ce = -3v 100 isc website www.iscsemi.cn 2 |
Price & Availability of BDX88
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |